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1 of 14 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt ldmos rf in vg pin 1 ( cut ) rf out vd pin 2 gnd base rf3934 120w gan wideband power amplifier the rf3934 is a 48v 120w high power disc rete amplifier designed for commercial wireless infrastructure, cellular and wi max infrastructure, industrial/scien- tific/medical and general purpose broadband amplifier applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high-performance amplifiers achieve high ef ficiency and flat gain over a broad fre- quency range in a single amplifier design. the rf3934 is an unmatched gan tran- sistor packaged in a hermetic, flanged ceramic package. this package provides excellent thermal stability through the use of advanced heat sink and power dissi- pation technologies. ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wide- band gain and power performance in a single amplifier. features ? broadband operation dc to 3.5ghz ? advanced gan hemt technology ? advanced heat-sink technology ? small signal gain = 13db at 2ghz ? 48v operation typical performance ? output power 140w at p3db ? drain efficiency 60% at p3db ? -40c to 85c operation applications ? commercial wireless infrastructure ? cellular and wimax infrastructure ? civilian and military radar ? general purpose broadband amplifiers ? public mobile radios ? industrial, scientific, and medical rf3934s2 2-piece sample bag rf3934sb 5-piece bag rf3934sq 25-piece bag rf3934sr 100 pieces on 7? short reel rf3934tr7 750 pieces on 7? reel rf3934pck-411 fully assembled evaluation board optimized for 2.14ghz; 48v ds120306 ? package: hermetic 2-pin flanged ceramic
2 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g ) -8 to +2 v gate current (i g )78ma operational voltage 65 v ruggedness (vswr) 10:1 storage temperature range -55 to +125 c operating temperature range (t c )-40 to +85c operating junction temperature (t j )200c human body model class 1a mttf (t j < 200c, 95% confidence limits)* 3 x 10 6 hours thermal resistances, r th (junction to case) measured at t c =85c, dc bias only 1.6 c/w *mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit (random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. bias conditions should also satisfy the following expression: p diss < (t j - t c ) / r th j-c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )2848v gate voltage (v gsq ) -4.5 -3.7 -2.5 v drain bias current 440 ma frequency of operation dc 3500 mhz capacitance c rss 9pfv g = - 8v, v d = ov c iss 40 pf v g = - 8v, v d = ov c oss 27.5 pf v g = - 8v, v d = ov dc functional test i g (off) - gate leakage 2 ma v g = - 8v, vd = ov i d (off) - drain leakage 2.5 ma v g = - 8v, vd = 48v v gs (th) - threshold voltage -4.2 v v d = 48v, i d = 20ma v ds (on) - drain voltage at high current 0.25 v v g = ov, i d = 1.5a rf functional test v gsq -3.4 v v d = 48v, i d = 440ma gain 10 12 db cw, p out = 50.8dbm, f = 2140mhz drain efficiency 55 60 % cw, p out = 50.8dbm, f = 2140mhz input return loss -12 db cw, p out = 50.8dbm, f = 2140mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . parameter specification unit condition min. typ. max. rf typical performance [1], [2] small signal gain 21 db cw, f = 900mhz small signal gain 13 db cw, f = 2140mhz output power at p3db 51.60 dbm cw, f = 900mhz output power at p3db 51.46 dbm cw, f = 2140mhz drain efficiency at p3db 75 % cw, f = 900mhz drain efficiency at p3db 60 % cw, f = 2140mhz [1] test conditions: cw operation, v dsq = 48v, i dq = 440ma, t = 25oc [2] performance in a standard tuned test fixture.
4 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard 2.14ghz tuned test fixture (cw, t = 25c, unless otherwise noted)
5 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com .
6 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard 900mhz tuned test fixture (cw, t = 25c, unless otherwise noted) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 26 40 42 44 46 48 50 52 drain eciency (%) gain (db) pout, output power (dbm) gain/ eciency vs. pout, f = 900mhz (pulsed 10% duty cycle, 10us, vd = 48v, idq = 440ma) gain drain
7 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 50 45 40 35 30 25 20 15 10 5 0 1 10 100 intermodulationdistortion(imd dbc) pout,outputpower(w pep) imdvs.outputpower (vd=48v,idq=440ma,f1=899.5mhz,f2=900.5mhz) imd3 imd3 imd5 imd5 imd7 imd7 19 20 21 22 23 24 1 10 100 1000 gain(db) pout,outputpower(wpep) gainvs.pout (2tone1mhzseperation,vd=48v,idqvaried,fc=900mhz) 220ma 330ma 440ma 550ma 660ma
8 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing package style: flanged ceramic pin function description 1 gate gate - vg input 2 drain drain - vd rf output 3 source source - ground base
9 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rf3934 evaluation board esd sensitive material. please use proper esd precau tions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering evaluation board. 1. connect rf cables at rf in and rf out . 2. connect ground to the ground supply terminal, and ensure that both the vg and vd grounds are also connected to this ground te rminal. 3. apply -8v to v g . 4. apply 48v to v d . 5. increase v g until drain current reaches 440ma or desired bias point. 6. turn on the rf input.
10 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 2.14ghz evaluation board schematic 2.14ghz evaluation boar d bill of materials component value manufacturer part number c1 10pf atc atc800a100jt c2, c10, c11, c15 33pf atc atc800a330jt c3,c14 0.1 ? f murata grm32nr72a104ka01l c4,c13 4.7 ? f murata grm55er72a475ka01l c5 100 ? f panasonic ECE-V1HA101UP c6 2.0pf atc atc800a2r0bt c7 0.3pf atc atc800a0r3bt c8 1.5pf atc atc800a1r5bt c9 2.7pf atc atc800a2r7bt c12 100 ? f panasonic eev-tg2a101m c17 1.8pf atc atc800a1r8bt r1 10 ? panasonic erj-8geyj100v c16, c18, c19 not used - - pcb ro4350, 0.030" thick dielectric rogers -

11 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 2.14ghz evaluation board layout device impedances note: device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. frequency z source ( ? ) z load ( ?? 2110mhz 1.58 - j2.56 3.5 - j0.08 2140mhz 1.49 - j2.25 3.46 + j0.38 2170mhz 1.42 - j1.96 3.43 + j0.85
12 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 900mhz evaluation board schematic 900mhz evaluation board bill of materials component value manufacturer part number c1, c2, c10, c11 68pf atc atc800a680jt c3,c14 0.1 ? f murata grm32nr72a104ka01l c4,c13 4.7 ? f murata grm55er72a475ka01l c15 not populated c6 15pf atc atc800a150jt c7 22pf atc atc800a220jt c8 12pf atc atc800a120jt c9 2.2pf atc atc800a2r2bt c12 330 ? f panasonic eeu-fc2a331 c5 100 ? f panasonic ECE-V1HA101UP r1 10 ? panasonic erj-8geyj100v rf39 34 r1 c1 c3 c4 c5 + v ga te v drai n c13 c14 c1 1 c12 + c8 c9 c10 50 ? ? str ip 50 ? ? strip j1 rf i n j2 rf o ut c2 c6 c7 c15
13 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 900mhz evaluation board layout device impedances note: device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. frequency z source( ? ) z load ( ?? 880mhz 1.24 + j3.0 5.49 + j3.4 900mhz 1.14 + j3.63 5.27 + j3.9 920mhz 1.11 + j4.20 5.03 + j4.40
14 of 14 rf3934 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/envir onmental conditions gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist across all three terminals of th e device. the physical manufactured characteristics of the device determine the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages ar e varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = -8v) and zero volts applied to the drain. during the measurement pro- cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the terminal ca pacitance measurements. the ca pacitance values presented in the typical characteristics table of th e device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletio n mode high electron mobility tr ansistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transi stor. the gate voltage must be taken to a potential lower than the source voltage to pinch off th e device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determin ed by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristic s of the device. the recom- mended quiescent drain current (i dq ) shown in the rf typical performance ta ble is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for bias ing this device based on performance trade-offs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal charac- teristics. this is measured using ir microscopy capturin g the device under test temperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the meas urement system from impacting the results. knowing the dissipated power at the time of th e measurement, the thermal resistance is calculated.

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